Nitride semiconductor device
US6337493B1 · kind B1 · utility
86Cited by
22References
18Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 20, 2000 |
| Grant date | Jan 8, 2002 |
| Priority date | — |
| Expiry date | Apr 20, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/918
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A nitride semiconductor device comprising an n-type nitride semiconductor layer, an active layer having a quantum well structure including a well layer of a nitride semiconductor containing In, the p-type nitride semiconductor layer having a p-type contact layer, a p-type high concentration doped layer interposed between said active layer and said p-type contact layer and a p-type multi-film layer interposed between said active layer and said p-type high concentration doped layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.