Semiconductor device and method of fabricating same
US6337517B1 · kind B1 · utility
16Cited by
10References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1998 |
| Grant date | Jan 8, 2002 |
| Priority date | — |
| Expiry date | Sep 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device capable of operating at a high speed or of having many functions. In this device, delamination of buried electrodes is prevented and thus high reliability is offered. The depth A of contact holes, the minimum linewidth R of a lower metallization layer, and the thickness B of the lower metallization layer satisfy relations given by(0.605/R)0.5<A<2.78−1.02B+0.172B2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.