Polishing slurry and polishing method
US6338744B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 11, 2000 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Jan 11, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Provided is a high purity polishing slurry which provides a material to be polished with a high scratch resistance and has a high polishing efficiency and which less contaminates the material to be polished. The polishing slurry comprises water and silica particles dispersed in water, wherein the above silica particles have an average primary particle size of 50 to 300 nm and a refractive index of 1.41 to 1.44 and are synthesized in a liquid phase and produced without passing through a drying step; and the K value is 5×10−6 mol/m2 or more. Further, a polishing process for a semiconductor wafer using the above polishing slurry is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.