Positive photoresist layer and a method for using the same
US6338930B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2000 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Sep 5, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for preparing a positive photoresist layer is provided. In this method, a photoresist composition is drop-wise applied on an insulator layer or a conductive metal layer formed on a substrate. The photoresist composition includes a polymer resin, a sensitizer for changing solubility of the photoresist layer when exposed and a solvent. The coated substrate is rotated at the speed of 1,250 to 1,350 rpm for 4.2 to 4.8 seconds. The coated substrate is then dried and the dried substrate is exposed to some form of radiation. Next, the exposed portion is removed by using an alkaline developing solution. The solvent preferably includes 3-methoxybutyl acetate and 4-butyrolactone, or includes 3-methoxybutyl acetate, 2-heptanone, and 4-butyrolactone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.