Method for forming polycrystalline silicon layer and method for fabricating thin film transistor
US6338987B1 · kind B1 · utility
3Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 19, 1999 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Aug 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a polycrystalline silicon layer for TFT according to the present invention includes steps of: depositing an amorphous silicon layer and a silicon oxidation layer on a substrate in this order; and implanting semiconductor ions into the amorphous silicon layer and the silicon oxidation layer while heating the substrate, thereby converting the amorphous silicon layer into a polycrystalline silicon layer, and forming an amorphous oxidation layer between the amorphous silicon layer and the silicon oxidation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.