Semiconductor device
US6339250B1 · kind B1 · utility
3Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1998 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Dec 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
On a silicon substrate, silicon oxide film is formed. On the silicon oxide film, a BPSG film is formed. On the BPSG film, a silicon oxide film which does not include at least phosphorus and has a thickness equal to or more than about 1 &mgr;m is formed as a protective film. On the silicon film, a fuse is formed. Covering the fuse, a silicon oxide film which does not include at least phosphorus is formed on the silicon oxide film. Thus, the corrosion of the fuse is prevented, whereby a semiconductor device with highly reliable metal interconnection can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.