Writing method for a magnetic immovable memory and a magnetic immovable memory
US6339543B1 · kind B1 · utility
8Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2000 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Jul 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A lattice shaped underlayer made of a ferroelectric material having a piezoelectric effect is formed on a substrate. On the crossing points of the underlayer magnetic films with a magnetoelastic effect are formed. By applying a voltage to the given column and row of the underlayer, the underlayer is stressed at the crossing point. Then the stress is transmitted to the magnetic film on the same crossing point making the magnetization reverse through the magnetoelastic effect, thus, carrying out writing to the MRAM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.