Semiconductor memory device with replacement programming circuit
US6339554B1 · kind B1 · utility
1Cited by
4References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 6, 2000 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Nov 6, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/785
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The semiconductor memory device capable of performing a repair using only the fuses for programming a defective address is provided. The semiconductor memory device is provided with at least two replacement programming circuits. Each replacement programming circuit includes a programming circuit for programming a defective address. An output of each replacement programming circuit is used as a signal for indicating whether to perform or not to perform a replacement. A word line that cannot be repaired by one replacement programming circuit is repaired using an output from another replacement programming circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.