Semiconductor memory device enabling test of timing standard for strobe signal and data signal with ease, and subsidiary device and testing device thereof
US6339555B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2001 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Jan 16, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/48
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A first delay circuit for delaying a data signal IND output from a memory circuit and a second delay circuit for delaying a strobe signal INS, and a latch circuit for latching data according to the outputs of the first and the second delay circuits are provided as a test circuit inside a DDR SDRAM. A tester can observe results of latching by the latch circuit to facilitate determination whether the data signal and the strobe signal have a correlation adapted to a standard. Accordingly, such a DDR SDRAM can be provided that is capable of conducting an examination whether the device meets a tDQSQ standard defining a correlation between the strobe signal DQS and the data signal DQ with ease.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.