Polishing slurry and polishing method
US6340374B1 · kind B1 · utility
15Cited by
8References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2000 |
| Grant date | Jan 22, 2002 |
| Priority date | — |
| Expiry date | Mar 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A polishing slurry having a high polishing rate is provided. A polishing slurry comprising water, fumed silica having an average primary particle size of 9 to 60 nm and spherical silica having an average primary particle size of 40 to 600 nm excluding the fumed silica, wherein a content of the whole silicas obtained by totaling the fumed silica and the spherical silica falls in a range of 1 to 40% by weight, and a process for polishing a semiconductor device using the polishing slurry described above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.