Resist pattern, process for the formation of the same, and process for the formation of wiring pattern
US6340635B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1999 |
| Grant date | Jan 22, 2002 |
| Priority date | — |
| Expiry date | Nov 4, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A process for the formation of a wiring pattern, which includes the steps of: exposing a resist through a photomask, the photomask having a pattern whose line width is equal to or less than a resolution limit; and developing the exposed resist to form a resist pattern having groove depressions on the surface thereof, the depressions not reaching the back of the resist pattern. The resist may be a positive resist in which case the resist pattern is formed on an underplate feed film; a plating metal is precipitated on the feed film in a region not covered by the resist pattern; the resist pattern is stripped after the precipitation; and the feed film is selectively removed in a region not covered by the plating metal. Alternatively, the resist may be a negative resist in which case the resist pattern is formed on a substrate; a metallic material is deposited on the resist pattern and the substrate; and the resist is stripped from the substrate to remove the overlying metallic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.