Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications
US6340788B1 · kind B1 · utility
199Cited by
18References
93Claims
0Family size
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Key dates
| Filing date | Dec 2, 1999 |
| Grant date | Jan 22, 2002 |
| Priority date | — |
| Expiry date | Dec 2, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved photovoltaic cell has an active silicon (Si) or silicon-germanium (SiGe) substrate subcell having an active upper side and characterized by a substrate bandgap. One or more upper subcells are disposed adjacent the upper side and current matched with the substrate subcell, with the upper subcell(s) typically having bandgap(s) greater than the substrate bandgap. A transition layer may be placed intermediate the upper side and the upper subcell(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.