Article comprising vertically nano-interconnected circuit devices and method for making the same
US6340822B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 5, 1999 |
| Grant date | Jan 22, 2002 |
| Priority date | — |
| Expiry date | Oct 5, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/848
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A circuit device is disclosed comprising at least two circuit layers or circuit devices vertically interconnected with a plurality of parallel and substantially equi-length nanowires disposed therebetween. The nanowires may comprise composites, e.g., having a heterojunction present along the length thereof, to provide for a variety of device applications. Also disclosed is a method for making the circuit device comprising growing a plurality of nanowires on a dissolvable or removable substrate, equalizing the length of the nanowires (e.g., so that each one of the plurality of nanowires is substantially equal in length), transferring and bonding exposed ends of the plurality of nanowires to a first circuit layer; and removing the dissolvable substrate. The nanowires attached to the first circuit layer then can be further bonded to a second circuit layer to provide the vertically interconnected circuit device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.