Strain sensing structure with improved reliability
US6341528B1 · kind B1 · utility
11Cited by
20References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 12, 1999 |
| Grant date | Jan 29, 2002 |
| Priority date | — |
| Expiry date | Nov 12, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0055
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A strain-sensing device comprises a metal, glass, ceramic, or plastic cell that has formed within it a diaphragm characterized by a thin layer of material bounded by a thick layer of material. A silicon strain gauge, either junction isolated or dielectric isolated, is attached directly to the diaphragm. The strain gauge has at least one sensing element that is aligned such that applied pressure to the diaphragm induces a strain in the sensing element. The silicon strain gauge has a triangular shape that is optimizes the performance and reliability of the sensor with the added benefit of making it more affordable as well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.