Method of depositing a multilayer thin film by means of magnetron sputtering which controls the magnetic field
US6342131B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 1998 |
| Grant date | Jan 29, 2002 |
| Priority date | — |
| Expiry date | Apr 17, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/35
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thin film deposition method comprises the steps of preparing a magnetron sputtering system having a magnetic field generation unit for changing a magnetic field, mounting, as a target, a composite material on a cathode of the magnetron sputtering system, providing a to-be-processed substrate on an anode of the magnetron sputtering system, evacuating a chamber of the magnetron sputtering system and thereafter filling the chamber with inert gas, and applying, onto the cathode, one of DC power and RF power and, at the same time, an alternating magnetic field from a lower portion of the target, thereby controlling a cycle and intensity of the alternating magnetic field to change a ratio of the not less than two components of the thin film in a film thickness direction of the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.