Apparatus and method for in-situ thickness and stoichiometry measurement of thin films
US6342265B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 20, 1997 |
| Grant date | Jan 29, 2002 |
| Priority date | — |
| Expiry date | Aug 20, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S436/804
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An apparatus and method for using &agr;-particle energy loss to measure the thickness and stoichiometry of films grown by molecular beam epitaxy and other methods. The apparatus for measuring the thickness of films grown on a substrate in a growth chamber, comprises a protective housing having an aperture opening into the growth chamber, a solid state detector disposed in the protective housing, a shutter for opening and closing the aperture, a shield disposed in the housing between the aperture and the solid state detector for shielding the detector, and a calibration source disposed between the shield and the detector for calibrating the measurements made by the detector. A second calibration source disposed between the shutter and the shield, for measuring deposition on the shield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.