Methods of processing semiconductor wafer, and producing IC card, and carrier
US6342434B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 1998 |
| Grant date | Jan 29, 2002 |
| Priority date | — |
| Expiry date | Jun 1, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer is made thin without any cracks or warp under good workability. The semiconductor wafer thinning process includes the first step of preparing a carrier formed of a base and a suction pad provided on one surface of the base or formed of a base film with an adhesive, the second step of bonding a semiconductor wafer to the carrier in such a manner that a rear surface of the semiconductor wafer with no circuit elements formed therein is opposite to the carrier to form a wafer composite, and the third step of holding the carrier of the wafer composite with its semiconductor wafer side up and spin-coating an etchant on the rear surface of the semiconductor wafer thereby to make the semiconductor wafer thin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.