Method of forming diffusion barrier for copper interconnects
US6342444B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2000 |
| Grant date | Jan 29, 2002 |
| Priority date | — |
| Expiry date | Mar 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A TiN film is selectively formed as a barrier layer on a Cu metal layer by selective removal of a Ti metal layer on the Si metal layer after the following steps of selectively forming a Si metal layer as an etching mask on an insulation film, forming a trench pattern by selective removal of the insulation film using the Si metal layer, forming a Cu metal layer in the trench pattern with the Si metal layer remained, forming the Ti metal layer on the Si metal layer and the Cu metal layer as a barrier material with a different kind of eutectic reaction with Cu from the reaction with the etching mask by heat-treatment in an atmosphere of nitrogen, and selectively nitriding the Ti metal layer on the Cu metal layer by heat-treatment of the Ti metal layer in an atmosphere of nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.