Nonvolatile semiconductor memory device
US6342715B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1998 |
| Grant date | Jan 29, 2002 |
| Priority date | — |
| Expiry date | Jun 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A nonvolatile semiconductor memory device comprises a semiconductor substrate, element isolating regions provided in the semiconductor substrate, first element regions, each of which is defined by two adjacent ones of the element isolating regions, and memory cell transistors formed in the element regions, wherein each of the memory cell transistors comprises a first gate insulating film formed on a corresponding one of the element isolating regions, a floating gate electrode formed on the gate insulating film, a second gate insulating film formed on the floating gate electrode, and a control electrode formed on the second gate insulating film and connected in common to a specific number of ones of the memory cell transistors to serve as a word line, and the floating gate includes a first conductive member with side faces in contact with side ends of the two adjacent ones of the element isolating regions and a second conductive member electrically connected to the first conductive member and formed so as to bridge a gap between the two adjacent ones of element isolating regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.