Fabrication method of Si nanocrystals

US6344082B1 · kind B1 · utility

Assignee

• Japan Agency of Industrial Science and Technology as represented by Director General of National Research Institute for Metals · JP

Inventors

• Kazuo Furuya · Chiba, JP
• Masaki Takeguchi · Ibaraki, JP
• Kazuhiro Yoshihara · Yokohama, JP

Key dates

• Filing date: Jun 29, 1999
• Grant date: Feb 5, 2002
• Expiry date: Jun 29, 2019

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S117/905
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Si nanocrystals are formed by irradiating SiO2 substrates with electron beams at a temperature of 400° C. or higher, thereby causing electron-stimulated decomposition reaction. As a result of the said reaction, single crystalline Si nanostructures are fabricated on the SiO2 substrate with good size and positional controllability.