Combinatorial molecular layer epitaxy device
US6344084B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2000 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | May 9, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
A combinatorial molecular layer epitaxy apparatus is provided which includes a common chamber (22) having pressure therein controllable; one or more conveyable substrate heating units (36) having a substrate holder (48) for holding one or more substrates in the common chamber; and one or more process conducting chambers (24, 26, 28) having pressure therein controllable and provided to correspond to the substrate heating units. The process conducting chambers includes a growth chamber (24) which has a multiple raw material supply means for supplying raw materials onto a substrate (5) held by a substrate heating unit, a gas supply means for feeding a gas onto a surface of the substrate, and an instantaneous observation means for instantaneously observing epitaxial growth of monomolecular layers for each of the layers on the substrate surface, thereby rendering the formation of vacuum chambers constituting from substrate heating unit and process conducting chambers, which are controllable in temperatures and pressures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.