Device and method for producing at least one SiC single crystal

US6344085B2 · kind B2 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Harald Kuhn · Frammersbach, DE
• Roland Rupp · Achern, DE
• Rene Stein · Simmerath, DE
• Johannes Volkl · Erlangen, DE

Key dates

• Filing date: Jan 16, 2001
• Grant date: Feb 5, 2002
• Expiry date: Jan 16, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T117/1092
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A device for producing a silicon carbide (SiC) single crystal contains a crucible having a storage region for holding a stock of solid SiC and having a crystal region for holding a SiC seed crystal. An insert made from glassy carbon is disposed in the crucible. In the method, solid SiC is sublimed as a result of the stock being heated and SiC in the gas phase is generated, which is conveyed to the SiC seed crystal, on which it grows as an SiC single crystal. A heat flux is controlled by an insert made from glassy carbon.