Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
US6344662B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2000 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Nov 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/615
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor (TFT) device structure based on an organic-inorganic hybrid semiconductor material, that exhibits a high field effect mobility, high current modulation at lower operating voltages than the current state of the art organic-inorganic hybrid TFT devices. The structure comprises a suitable substrate disposed with the following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic-inorganic hybrid semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the gate voltage dependence of the organic-inorganic hybrid semiconductor to achieve high field effect mobility levels at very low operating voltages. Judicious combinations of the choice of this high dielectric constant gate insulator material and the means to integrate it into the organic-inorganic hybrid based TFT structure are taught that would enable easy fabrication on glass or plastic substrates and the use of such devices in flat pa…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.