Amplifier-type solid-state image sensor device
US6344666B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1999 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Sep 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/334
Abstract
In an amplifier-type solid-state image sensor device, each unit cell comprises a photoconverter and a signal scanning circuit in an image sensing region on a semiconductor substrate, a metal film has an opening region for defining regions where light is radiated in the photoconverters of the unit cells, and a center position of the opening region of the metal film is displaced to the side of the center of the image sensing region with respect to a center portion of the photoconverter, so that the amount of light entering the center of the semiconductor chip and the peripheral portions of the semiconductor chip can be made equal, thereby obtaining substantially the same sensitivity at the center and peripheral portions of the semiconductor chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.