Solid-state sensor and system
US6344670B2 · kind B2 · utility
8Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2001 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Jan 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
Abstract
The solid-state image sensor comprises a semiconductor substrate, a plurality of photoelectric conversion sections formed within respective isolated active regions on the semiconductor substrate, an image area wherein unit cells comprising the plurality of photoelectric conversion sections and a signal scanning circuit are arranged in a two-dimensional array form, and signal lines for reading signals from the respective unit cells within the image pick-up area, wherein the respective photoelectric conversion sections being formed by at least two ion implantations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.