Manufacturing method of semiconductor device
US6346464B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2000 |
| Grant date | Feb 12, 2002 |
| Priority date | — |
| Expiry date | Jun 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a low power dissipation semiconductor power device is provided which is easy to perform and suitable for mass production. When a first and second conductivity-type regions are formed on a semiconductor substrate which is selectively irradiated by impurity ions, an excellent super junction is formed by controlling the ion acceleration energy and the width of each irradiated region so that the first and second conductivity-type regions may have a uniform impurity distribution and a uniform width along the direction of irradiation. Another method of manufacturing a low power dissipation semiconductor power device having an excellent super junction is provided which selectively irradiates a collimated neutron beam onto a P+ silicon ingot and forms an N+ region that has a uniform impurity distribution and a uniform width along the direction of irradiation in the P+ silicon ingot.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.