Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
US6346720B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 1996 |
| Grant date | Feb 12, 2002 |
| Priority date | — |
| Expiry date | Jan 24, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/852
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides for a high quality Group III-V compound semiconductor, a method of manufacturing the same, and a light emitting element with an excellent emission characteristic which incorporates such a Group III-V compound semiconductor. The Group III-V compound semiconductor has a structure in which a fifth-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula GaaAlbN (a+b=1, 0≦a≦1, 0≦b≦1), a fourth-layer having a lower impurity concentration, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gaa′Alb′N (a′+b′=1, 0≦a′≦1, 0≦b′≦1), and a first-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula InxGayAlzN (x+y+z=1, 0<x<1, 0<y<1, 0≦z<1), a second-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gax′Aly′N (x′+y′=1, 0<x′≦1, 0≦y′<1), and a third-layer, which is formed by a Group III-V compound semiconductor which is expressed by a general formula Gax″Aly″N (x&…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.