Secondary electron amplification structure employing carbon nanotube, and plasma display panel and back light using the same
US6346775B1 · kind B1 · utility
21Cited by
4References
23Claims
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Key dates
| Filing date | May 1, 2000 |
| Grant date | Feb 12, 2002 |
| Priority date | — |
| Expiry date | May 1, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/952
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A secondary electron amplification structure employing carbon nanotube and a plasma display panel and back light using the same are provided. The secondary electron amplification structure is formed by stacking a MgO film, a film of a fluoride such as MgF2, CaF2 or LiF, or a film of an oxide such as Al2O3, ZnO, CaO, SrO, SiO2 or La2O3 on a carbon nanotube (CNT), which functions to increase the secondary electron emission coefficient caused by electrons or ions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.