Patent · US Expired

Method of making silicon carbide-silicon composite having improved oxidation resistance

US6347446B1 · kind B1 · utility

27Cited by
19References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 3, 1999
Grant dateFeb 19, 2002
Priority date
Expiry dateJun 3, 2019

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/265
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

A Silicon carbide-silicon matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is provided. A method is given for sealing matrix cracks in situ in melt infiltrated silicon carbide-silicon matrix composites. The composite cracks are sealed by the addition of various additives, such as boron compounds, into the melt infiltrated silicon carbide-silicon matrix.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.