Thermopile infrared sensor and process for producing the same
US6348650B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2000 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Mar 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48091
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An improved thermopile infrared sensor is provided wherein thermoelectric elements are formed on a single crystalline silicon substrate containing a cavity therein. The thermopile infrared sensor contains a first dielectric film covering the cavity, a plurality of n-type polycrystalline silicon layers formed on the first dielectric film, extending radially from the vicinity of a chip center, and metal film layers formed in contact with the n-type polycrystalline silicon layers, wherein hot junctions are formed at the chip central side and cold junctions are formed at the chip peripheral side of the n-type polycrystalline silicon layers, respectively, by contacting the n-type polycrystalline silicon layer and the metal film layer, and at least one series of thermoelectric elements is formed on the first dielectric film by connecting alternately and successively, by the metal film layer, the hot junction and cold junction of the neighboring n-type polycrystalline silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.