Semiconductor device utilizing a rugged tungsten film
US6348708B1 · kind B1 · utility
2Cited by
14References
10Claims
0Family size
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Key dates
| Filing date | Jul 3, 1996 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Oct 25, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
Abstract
A DRAM cell capacitor having a high capacitance is obtained by forming a lower capacitor electrode of TiN and a roughened tungsten film on the TiN layer. A high dielectric constant film, such as tantalum pentaoxide, is then provided on the tungsten film and an upper capacitor electrode is deposited on the dielectric film. A method of forming the roughened tungsten film includes the step of depositing tungsten on the TiN layer at a temperature in the range of 200-650° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.