Indirect hot cathode (IHC) ion source
US6348764B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2000 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Aug 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J27/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An indirect hot cathode ion source for use in an ion implanter is disclosed. The ion source can be constructed by a chamber formed of two endwalls, two sidewalls, a top and a bottom wall defining a cavity therein for producing plasma ions. An opening, or a slit through one sidewall of the chamber, is used for ejecting the plasma ions therethrough. Inside the ion source chamber, an anode, or an anti-cathode, is positioned in close proximity to a first endwall of the chamber, while a cathode is positioned in close proximity to a second endwall of the chamber opposing the first endwall. The cathode is constructed by a filament for passing an electrical current therethrough, and a filament shield of cylindrical shape surrounding the filament spaced apart from an inner periphery of an opening in the second endwall. The inner periphery of the opening in the second endwall is provided with a torroidal-shaped recess in and along an inner periphery of the opening adjacent to the cavity of the chamber such that deposition of materials on the inner periphery of the opening and electrical shorting or arcing with the filament shield can be avoided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.