High-side, low-side configurable driver
US6348820B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2000 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Jul 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0806
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high-side, low-side driver that controls voltage from a voltage source to an inductive or resistive load includes a power transistor with a gate, a source and a drain. The driver is configured in a high-side configuration when the load is connected between the source and ground and the drain is connected to the voltage source and in a low-side configuration when the load is connected between the drain and the voltage source and the source is connected to ground. A gate drive circuit turns the power transistor on and off. The positive clamp circuit is connected to the drain and the voltage source. The positive clamp circuit provides a recirculation path for inductive energy that is stored in the inductive load when a loss of reverse battery condition occurs or when ground is lost. A negative clamp circuit that is connected to the source and ground provides a recirculation path for inductive energy that is stored in the inductive load when a loss of reverse battery condition occurs and when battery voltage is lost in the high-side configuration. The power transistor is preferably an isolated lateral double-diffused metal oxide semiconductor field effect transistor (ILDMOSFET). A cu…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.