Plasma treatment equipment
US6349670B1 · kind B1 · utility
14Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1999 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Nov 18, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R27/02
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster as compared with conventional plasma equipment, and the film quality is high. Metal plates AC short between a chamber wall and a shield of an electrode of the same DC potential as the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.