Linear magnetron arc evaporation or sputtering source
US6350356B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 14, 1999 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Apr 14, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/352
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A linear magnetron cathode is disclosed which may be used as a vapor or plasma source for coating deposition or ion processing. The cathode has the shape of an elongated rectangular bar with vaporization of material occurring from an evaporable surface wrapping around the periphery of the bar, along two opposite sides and around both ends. A magnetic field is established over the entire evaporable surface which has a component parallel to the surface and perpendicular to the long direction of the cathode, forming a closed-loop magnetic tunnel around the periphery which directs an arc plasma discharge. Side shields adjacent to sand projecting outward from the sides of the evaporable surface block a significant fraction of the macroparticles ejected from reaching the substrate region. The invention provides uniform cathode erosion and a vaporized material stream in two directions over an extended length, permitting uniform deposition or implantation over large areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.