Method for making flash memory with UV opaque passivation layer
US6350651B1 · kind B1 · utility
3Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1999 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Jun 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a flash memory having a passivation layer that is not transparent to ultraviolet light. The method comprises forming a semiconductor substrate that includes a flash memory cell having a floating gate, then forming a conductive layer on the substrate. Process induced charge that has accumulated on the flash cell floating gate is then neutralized and a passivation layer, which is not transparent to ultraviolet light, is formed on the conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.