Semiconductor substrate and production method thereof
US6350703B1 · kind B1 · utility
63Cited by
6References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1999 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Jul 6, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B31/22
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing an SOI substrate is disclosed which comprises a step of preparing an Si substrate prepared by the floating zone process (FZ process), a step of implanting oxygen ions from the principal surface side of the Si substrate thereinto to form an ion-implanted layer in the Si substrate, and a buried Si oxide layer forming step of forming an Si oxide layer buried below the single-crystal Si layer on the principal surface side, by a heat treatment of the Si substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.