Wafer-fused semiconductor radiation detector
US6350989B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1999 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Apr 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/107
Abstract
Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conduct…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.