Power semiconductor diode

US6351024B1 · kind B1 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Martin Ruff · Vaterstetten, DE
• Hans-Joachim Schulze · Taufkirchen, DE

Key dates

• Filing date: Feb 5, 1999
• Grant date: Feb 26, 2002
• Expiry date: Feb 5, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/53

Abstract

A semiconductor body including a first surface, a second surface, and a base doping for electrical conductivity. A first doped region is on the first surface and a second doped is on the second surface. The two doped regions are doped with opposites signs for electrical conductivity. A contact is positioned on each of the two doped regions. Another region is within the semiconductor body and has an outer section in which the charge carrier concentration in the outer section is lower due to the reduction of the concentration of dopant in the first doped region and/or the increase of concentration of recombination centers in the outer section.