Pixel structure of an organic light-emitting diode display device
US6351078B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2000 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Oct 11, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2320/043
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel structure of an organic light-emitting diode (OLED) display device connects a resistor in series with the source electrode of a thin film transistor to increase the illumination uniformity of pixels of the OLED display device. The pixel structure comprises first and second thin film transistors (TFT), a storage capacitor, a resistor and an OEL element. A negative feedback loop is formed by the connection of the resistor in series with the source electrode of the second TFT which can be a p-type or an n-type thin film transistor. When the current of the OLED is within the micro-amp level and the resistance level of the resistor is within the million-ohm level, the current-voltage characteristic curves have more linear relationship and the switching of gray-level brightness becomes easier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.