Ferromagnetic tunnel junction random access memory, spin valve random access memory, single ferromagnetic layer random access memory, and memory cell array using the same
US6351410B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2000 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Sep 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A ferromagnetic tunnel junction random access memory includes a ferromagnetic tunnel junction structure including a first ferromagnetic layer, a second ferromagnetic layer disposed adjacent to the first ferromagnetic layer and having a fixed magnetization, and a tunnel insulator layer interposed between the first and second ferromagnetic layers; a conductor plug penetrating the first ferromagnetic layer, the tunnel insulator layer and the second ferromagnetic layer along a center axis; a first selection line coupled to a first end of the conductor plug; and a second selection line coupled to a second end of the conductor plug opposite to the first end. The first ferromagnetic layer has a generally ring shape surrounding the conductor plug and is insulated from the conductor plug. One of the first and second ferromagnetic layers has an antiferromagnetic layer pattern on a portion thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.