Method of fabricating SRAM cell having a field region

US6352888B1 · kind B1 · utility

Assignee

• Hyundai Electronics Industries Co. Ltd. · KR

Inventor

• Dong Sun Kim · Seoul, KR

Key dates

• Filing date: Jan 6, 2000
• Grant date: Mar 5, 2002
• Expiry date: Jan 6, 2020

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/903

Abstract

A static random access memory (SRAM) cell includes first and second load devices, first and second access transistors, first and second drive transistors, and two bit lines. The SRAM includes a substrate; an active region in the substrate, the active region being formed in a direction; gate electrodes of the first and second access transistors crossing the active region, the gate electrodes of the first and second access transistors are parallel with each other; gate electrodes of the first and second drive transistors crossing the active region, the gate electrodes of the first and second drive transistors are parallel with each other; and first and second load devices on the gate electrodes of the first and second access transistors, the first and second load devices are parallel with each other.