Method of using a wide wavelength range high efficiency avalanche light detector with negative feedback

US6353238B2 · kind B2 · utility

Assignee

• The Board of Regents of the University of Texas System · US

Inventors

• Peter P. Antich · Richardson, US
• Edward N. Tsyganov · Duncanville, US

Key dates

• Filing date: Apr 23, 2001
• Grant date: Mar 5, 2002
• Expiry date: Apr 23, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/225

Abstract

A novel use of a solid state light detector with a low impedance substrate is described. Light that enters the substrate after traversing the antireflective layer creates an electron-hole pair. The electrons are collected in a crystalline epitaxial layer that spans the space charge region, or depletion layer. A high electric field accelerates free electrons inside the depletion region. The electrons collide with the lattice to free more holes and electrons resulting from the presence of a n-p junction, or diode. The diode is formed by placing the crystalline layer which has positive doping in close proximity with the electrodes which have negative doping. The continual generation of charge carriers results in avalanche multiplication with a large multiplication coefficient. During the avalanche process, electrons can be collected enabling light detection. A resistive layer is used to quench, or stop, the avalanche process.