Body-tied-to-source partially depleted SOI MOSFET
US6353245B1 · kind B1 · utility
25Cited by
3References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 2, 1999 |
| Grant date | Mar 5, 2002 |
| Priority date | — |
| Expiry date | Sep 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6759
Abstract
A silicon-on-oxide MOS transistor is disclosed which has an implanted region on the source side of the gate electrode for making contact with the body node. A contact region of the same conductivity type as the body is formed in the source region with a minimum spacing from the patterned gate corner such that the dopant of the implant region does not diffuse into the gate and thereby destroy the transistor
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.