Semiconductor device and manufacturing method thereof
US6353263B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2000 |
| Grant date | Mar 5, 2002 |
| Priority date | — |
| Expiry date | Mar 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When a first semiconductor chip is installed on a circuit substrate by using an anisotropic conductive bonding agent, one portion thereof is allowed to protrude outside the first semiconductor chip. A second semiconductor chip is installed on the first semiconductor chip and a support portion formed by the protruding resin. The protruding portion of the second semiconductor chip is supported by the support portion from under. Thus, in a semiconductor device having a plurality of laminated semiconductor chips in an attempt to achieve a high density, even when, from a semiconductor chip stacked on a circuit substrate, one portion of a semiconductor chip stacked thereon protrudes, it is possible to carry out a better wire bonding process on electrodes formed on the protruding portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.