Wide temperature range RTD
US6354736B1 · kind B1 · utility
25Cited by
18References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1999 |
| Grant date | Mar 12, 2002 |
| Priority date | — |
| Expiry date | Mar 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C7/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An RTD having a thin film HfN resistor formed on a substrate for temperature detection in accordance with the resistance of the HfN resistor. The RTD is a two lead device having high accuracy and a wide temperature range from 20 to 1400 degrees Kelvin. The substrate has bonding pads or contact strips connected to the resistor and processing electronics. An SiN thin film passivation layer is formed on the resistor and substrate. Two leads connect the bonding pads or contact strips to processing electronics and an indicator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.