Removable large area, low defect density films for led and laser diode growth
US6355497B1 · kind B1 · utility
67Cited by
6References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2000 |
| Grant date | Mar 12, 2002 |
| Priority date | — |
| Expiry date | Jan 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique based on etching a release layer, for separating the nearly lattice matched substrate from a base substrate is disclosed. A nearly lattice matched substrate for the epitaxial growth of Group-III nitride semiconductor devices and method of fabricating the nearly lattice matched substrate and devices is disclosed. Enhanced ELOG methods are used to create low defect density GaN films. The GaN films are used to grow Group-III nitride LEDs and laser diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.