Plasma processing method and apparatus
US6355573B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2000 |
| Grant date | Mar 12, 2002 |
| Priority date | — |
| Expiry date | May 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing method that controls an interior of a vacuum chamber to a specified pressure by introducing gas into the vacuum chamber and evacuating the interior of the vacuum chamber. A high-frequency power having a frequency of 50 MHz to 3 GHz is supplied to a site of an antenna other than its center and periphery with the antenna provided opposite to a substrate in the vacuum chamber, in a state where a general center of the antenna and the vacuum chamber are short-circuited to each other. Meanwhile, the interior of the vacuum chamber is controlled to the specified pressure, and plasma is generated within the vacuum chamber and the substrate placed on a substrate electrode is processed within the vacuum chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.