Method and apparatus for producing monocrystals
US6358315B1 · kind B1 · utility
1Cited by
3References
16Claims
0Family size
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Key dates
| Filing date | Mar 16, 2000 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Mar 16, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method and an apparatus for producing monocrystals, in particular of gallium arsenide monocrystals, the crystal growth is carried out with a thermal shock resistant nucleus which is freely standing within a nucleus channel and the interspace in the nucleus channel between the nucleus and the crucible is filled with liquid boric oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.