Bismuth thin films structure and method of construction
US6358392B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1999 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Nov 18, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S205/922
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention is directed to the use of electrochemical deposition to fabricate thin films of a material (e.g., bismuth) exhibiting a superior magnetoresistive effect. The process in accordance with a preferred embodiment produces a thin film of bismuth with reduced polycrystallinization and allows for the production of single crystalline thin films. Fabrication of a bismuth thin film in accordance with a preferred embodiment of the invention includes deposition of a bismuth layer onto a substrate using electrochemical deposition under relatively constant current density. Preferably, the resulting product is subsequently exposed to an annealing stage for the formation of a single crystal bismuth thin film. The inclusion of these two stages in the process produces a thin film exhibiting superior MR with a simple field dependence in the process suitable for a variety of field sensing applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.